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| SMD Type N- and P-Channel MOSFET KI4503DY Transistors IC Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec. TJ, Tstg IDM IS PD 2 2.27 1.45 Symbol VDS VGS ID 8.8 7 30 1.1 1.25 0.8 -1.2 1.38 0.88 -55 to 150 N-Channel 10 sec Steady State 30 20 6.3 5.2 -4.5 -3.6 -20 0.9 1 0.64 P-Channel 10 sec Steady State -8 8 -3.8 -3 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 45 85 25 Max 55 100 30 P-Channel Typ 75 100 53 Max 90 125 65 /W Unit Steady State Steady State www.kexin.com.cn 1 SMD Type KI4503DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 8 V VDS = 24V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -6.4V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55 VDS = -6.4V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 10 V VDS =-5 V, VGS = -4.5 V VGS = 10 V, ID = 8.8A Drain Source On State Resistance* rDS(on) VGS = -4.5 V, ID = -4.5A VGS = 4.5 V, ID = 7.2A VGS = -2.5 V, ID = -3.7A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time gfs VSD Qg Qgs Qgd td(on) tr VDS = 15 V, ID = 8.8A VDS = -15 V, ID = -4.5A IS = 2.0A, VGS = 0 V IS = -1.2A, VGS = 0 V N-Channel VDS = 15 V, VGS = 5V, ID = 8.8A P-Channel VDS = -4 V, VGS = -5 V, ID = -4.5A N Channel VDD = 15 V, RL = 15 ID= 1A, VGEN = 10V, Rg = 6 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -4 V, RL = 4 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch P-Ch N-Ch P-Ch IF = 1.7 A, di/dt = 100 A/ s N-Ch P-Ch 30 Transistors IC Min 0.8 -0.45 Typ Max Unit V 100 100 1 -1 5 -5 -20 0.015 0.018 0.034 0.042 0.022 0.027 0.048 0.060 20 13 0.71 -0.70 14.5 15 3.3 3.0 6.6 2.0 13 20 9 50 35 110 17 60 35 60 20 40 18 100 50 220 30 120 70 100 ns 1.1 -1.1 20 25 nC S V A A nA Turn Off Delay Time td( off) 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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